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MITSUBISHI Nch POWER MOSFET FS10KMH-03 HIGH-SPEED SWITCHING USE FS10KMH-03 OUTLINE DRAWING 10 0.3 6.5 0.3 3 0.3 Dimensions in mm 2.8 0.2 15 0.3 f 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 E 0.75 0.15 2.54 0.25 2.54 0.25 4.5 0.2 123 2.6 0.2 w 2.5V DRIVE VDSS .................................................................................. 30V rDS (ON) (MAX) .............................................................. 92m ID ......................................................................................... 10A Integrated Fast Recovery Diode (TYP.) ............. 35ns Viso ................................................................................ 2000V q q GATE w DRAIN e SOURCE e TO-220FN APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight L = 30H VGS = 0V VDS = 0V Conditions Ratings 30 10 10 40 10 10 40 15 -55 ~ +150 Unit V V A A A A A W C C V g Feb.1999 AC for 1minute, Terminal to case Typical value -55 ~ +150 2000 2.0 MITSUBISHI Nch POWER MOSFET FS10KMH-03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25C) Test conditions ID = 1mA, VGS = 0V VGS = 10V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 4V ID = 5A, VGS = 2.5V ID = 5A, VGS = 4V ID = 5A, VDS = 5V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 30 -- -- 0.6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 0.9 68 88 0.34 12 540 160 55 12 35 45 40 1.0 -- 35 Max. -- 0.1 0.1 1.2 92 141 0.46 -- -- -- -- -- -- -- -- 1.5 8.3 -- Unit V A mA V m m V S pF pF pF ns ns ns ns V C/W ns Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 15V, ID = 5A, VGS = 4V, RGEN = RGS = 50 IS = 5A, VGS = 0V Channel to case IS = 5A, dis/dt = -50A/s PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 20 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 7 5 tw = 10ms 100ms 1ms 10ms DC 16 12 8 TC = 25C Single Pulse 4 0 0 50 100 150 200 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) 20 Tc = 25C Pulse Test VGS = 5V 2.5V 10 4V 3V VGS = 5V 4V 3V 2.5V DRAIN CURRENT ID (A) 16 DRAIN CURRENT ID (A) 8 2V 12 PD = 15W 6 Tc = 25C Pulse Test 8 2V 4 4 1.5V 2 1.5V 0 0 0.4 0.8 1.2 1.6 2.0 0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10KMH-03 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0 Tc = 25C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 100 Tc = 25C Pulse Test VGS = 2.5V DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 1.6 80 1.2 ID = 15A 60 4V 0.8 10A 40 0.4 5A 20 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 0 1.0 2.0 3.0 4.0 5.0 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 40 Tc = 25C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 4 3 2 101 7 5 4 3 2 TC = 25C 75C 125C VDS = 5V Pulse Test DRAIN CURRENT ID (A) 24 16 8 FORWARD TRANSFER ADMITTANCE yfs (S) 32 0 0 1.0 2.0 3.0 4.0 5.0 100 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 104 7 5 3 2 Tch = 25C f = 1MHZ VGS = 0V SWITCHING CHARACTERISTICS (TYPICAL) 102 7 5 4 3 2 td(on) td(off) tf tr 103 7 5 3 2 102 7 5 3 2 SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) Ciss Coss Crss 101 7 5 4 3 2 100 0 10 2 3 4 5 7 101 Tch = 25C VDD = 15V VGS = 4V RGEN = RGS = 50 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10KMH-03 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VGS (V) 5.0 Tch = 25C ID = 10A 4.0 SOURCE CURRENT IS (A) 32 3.0 VDS = 10V 24 TC = 125C 75C 2.0 20V 25V 16 25C 1.0 8 0 0 2 4 6 8 10 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 4V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10-1 -50 0 50 100 150 2.0 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 1.6 1.2 0.8 0.4 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 D = 1.0 7 0.5 5 3 0.2 2 100 7 5 3 2 0.1 0.05 0.02 0.01 Single Pulse 1.2 1.0 0.8 PDM tw T D= tw T 0.6 0.4 -50 0 50 100 150 10-1 -4 10 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999 CHANNEL TEMPERATURE Tch (C) |
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